Transistor KT825G

Main technical characteristics of the KT825G transistor:
• Transistor structure: p-n-p;
• Рк т max - Continuous dissipated power of the collector with a heat sink: 125 W;
• fгр - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: at least 4 MHz;
• Uэбо max - Maximum emitter-base voltage at a given reverse emitter current and an open collector circuit: 5 V;
• Iк max - Maximum permissible direct collector current: 20 A;
• Iк и max - Maximum permissible pulse collector current: 40 A;
• h21э - Static current transfer coefficient of the transistor for circuits with a common emitter: 750...18000;
• Ск - Collector junction capacitance: no more than 600 pF;
• Rke nat - Saturation resistance between collector and emitter: no more than 0.4 Ohm.