Transistor MP11A

  • Transistor MP11A
Артикул: 28237
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10 грн.
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10+ 0,50 грн. 5 9,50 грн.
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100+ 2 грн. 20 8 грн.

Main technical characteristics of the MP11A transistor:
• Transistor structure: n-p-n
• Рк max - Constant dissipated collector power: 150 mW;
• fh21b - Limiting frequency of the transistor current transfer coefficient for circuits with a common emitter and common base: not less than 2 MHz;
• Ucbo probe - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 15 V;
• Uebo probe - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V;
• Ik max - Maximum allowable direct collector current: 20 mA;
• h21e - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter and a common base, respectively: 45 ...100;
• Sk - Capacitance of the collector junction: no more than 60 pF.

Brand nameСНГ
StructureNPN
Transistor typeBipolar
Power150мВт
Transistor case typeКТЮ-3-3
Mounting typeDIP
Weight g.1.8
Factory packaging50pcs
Collector-emitter voltage15В
Collector current150мА
Current gain100
Frequency2МГц

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