Transistor P213

  • Transistor P213
Артикул: 26928
in stock (158 pc.)
12 грн.
Доступные скидки
Название Скидка Скидка, % Цена
10+ 0,60 грн. 5 11,40 грн.
50+ 1,20 грн. 10 10,80 грн.
100+ 2,40 грн. 20 9,60 грн.

The main technical characteristics of the transistor P213:
• Transistor structure: pnp
• Рк t max - Constant power dissipation of the collector with a heat sink: 11.5 W;
• fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz;
• Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 45 V;
• Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V;
• Ik max - Maximum allowable DC collector current: 5 A;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.15 mA;
• h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 20...50;
• Rke us - Saturation resistance between collector and emitter: no more than 0.16 Ohm.

Brand nameСНГ
StructurePNP
Transistor typeBipolar
Power11,5Вт
Mounting typeDIP
Weight g.10
Factory packaging20pcs
Collector-emitter voltage40В
Collector current
Current gain50
Frequency0,15МГц

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