Transistor P214A
Название | Скидка | Скидка, % | Цена |
---|---|---|---|
10+ | 0,60 грн. | 5 | 11,40 грн. |
50+ | 1,20 грн. | 10 | 10,80 грн. |
100+ | 2,40 грн. | 20 | 9,60 грн. |
Transistors P214A germanium alloy structures pnp universal.
Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters.
The main technical characteristics of the P214A transistor:
• Transistor structure: pnp
• Рк t max - Constant power dissipation of the collector with a heat sink: 10 W;
• fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz;
• Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 60 V;
• Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V;
• Ik max - Maximum allowable DC collector current: 5 A;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.3 mA;
• h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 50...150;
• Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm.
Brand name | СНГ |
Structure | PNP |
Transistor type | Bipolar |
Power | 10Вт |
Mounting type | DIP |
Weight g. | 11 |
Factory packaging | 20pcs |
Collector-emitter voltage | 55В |
Collector current | 5А |
Current gain | 150 |
Frequency | 0,15МГц |
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