Transistor KT826A

  • Transistor KT826A
Vendor code: 26109
in stock (24 pc.)
30 грн.
Доступные скидки
Название Скидка Скидка, % Цена
10+ 1.50 грн. 5 28.50 грн.
50+ 3 грн. 10 27 грн.
100+ 6 грн. 20 24 грн.

The main technical characteristics of the transistor KT826A:
• Transistor structure: npn;
• Рк t max - Constant power dissipation of the collector with a heat sink: 15 W;
• fgr - Cutoff frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 6 MHz;
• Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 700 V (0.01 kOhm);
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V;
• Ik max - Maximum allowable DC collector current: 1 A;
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 10... 120;
• Sk - Collector junction capacitance: no more than 25 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 5 ohms.

Brand nameСНГ
StructureNPN
Transistor typeBipolar
Power15Вт
Transistor case typekt-9
Mounting typeDIP
Weight g.14
Factory packaging40pcs
Collector-emitter voltage700В
Collector current
Current gain10
Frequency6МГц

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