Transistor P216D
Название | Скидка | Скидка, % | Цена |
---|---|---|---|
10+ | 0,75 грн. | 5 | 14,25 грн. |
50+ | 1,50 грн. | 10 | 13,50 грн. |
100+ | 3 грн. | 20 | 12 грн. |
The main technical characteristics of the transistor P216D:
• Transistor structure: pnp
• Рк t max - Constant power dissipation of the collector with a heat sink: 24 W;
• fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz;
• Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 50 V;
• Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V;
• Ik max - Maximum allowable DC collector current: 7.5 A;
• Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 2 mA;
• h21Э - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 15... 30;
• Rke us - Saturation resistance between collector and emitter: no more than 0.25 Ohm.
Brand name | СНГ |
Structure | PNP |
Transistor type | Bipolar |
Power | 24Вт |
Mounting type | DIP |
Weight g. | 10 |
Factory packaging | 20pcs |
Collector-emitter voltage | 50В |
Collector current | 7,5A |
Current gain | 30 |
Frequency | 0,1МГц |
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