Diode E115A (=KD219A)
Доступные скидки
| Название | Скидка | Скидка, % | Цена |
|---|---|---|---|
| 50+ | 1,50 грн. | 10 | 13,50 грн. |
| 200+ | 3 грн. | 20 | 12 грн. |
| 500+ | 4,50 грн. | 30 | 10,50 грн. |
Diodes KD219A silicon, epitaxial, with a Schottky barrier.
Designed for use in low-voltage secondary power supplies at frequencies of 10...200 kHz.
The main technical characteristics of the diode 2KD219A:
• Uobr and max - Maximum impulse reverse voltage: 15 V;
• Inp max - Maximum forward current: 10 A;
• Inp and max - Maximum pulse forward current: 250 A;
• Unp - DC forward voltage: no more than 0.6 V at Inp 10 A;
• fmax - Maximum operating frequency of the diode: 200 kHz.
| Diode design | single |
| Type of shell | КД-11 |
| Diode type | Schottky |
| Urev. max, V | 15V |
| Ipr. max. | 10A |
| Brand name | СНГ |
| Mounting type | Screw |
| Weight g. | 5.2 |
| Factory packaging | 100 pieces. |
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